IRF9530 MOSFET Transistor

IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

• Transistor Type: P Channel
• Voltage Applied From Drain to Source: -100V(Maximum)
• Gate to Source Voltage Should Be: ±20V(Maximum)
• Continues Drain Current is: -12A(Maximum)
• Drain to Source Resistance in ON State: 0.300 Ohms
• Pulsed Drain Current is: -48A(Maximum)
• Power Dissipation is: 88W(Maximum)
• Storage & Operating Temperature Should Be: -55 to +150 Centigrade (Maximum)
• Dynamic DV/DT Rating
• Repetitive 100% Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• New High Voltage Benchmark

Specifications

• Number of Pins 3
• Supplier Device Package TO-220AB
• Weight 6 g
• Technology MOSFET (Metal Oxide)
• Number of Channels 1
• Power Dissipation-Max 88W Tc
• Power Dissipation 88W
• Turn On Delay Time 12 ns
• Rds On (Max) @ Id, Vgs 300mOhm @ 7.2A, 10V
• Vgs(th) (Max) @ Id 4V @ 250μA
• Input Capacitance (Ciss) (Max) @ Vds
• Current – Continuous Drain (Id) @ 25°C 12A Tc
• Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
• Rise Time 52ns
• Drain to Source Voltage (Vdss 100V
• Drive Voltage (Max Rds On,Min Rds On) 10V
• Vgs (Max) ±20V
• Fall Time (Typ) 39 ns
• Turn-Off Delay Time 31 ns
• Continuous Drain Current (ID) 12A
• Gate to Source Voltage (Vgs) 20V
• Drain to Source Breakdown Voltage -100V
• Input Capacitance 860pF
• Drain to Source Resistance 300mOhm
• Rds On Max 300 mΩ
• Height 9.01mm
• Length 10.41mm
• Width 4.7mm

Applications

• Used in Uninterrupted Power Supplies
• Used in Motor Driver Applications
• Used in High-Speed Switching Applications
• Used in Switching Regulators
• Used in Relay Driving Applications
• Used in Battery Charger Circuits

Package Include

1x IRF9530 MOSFET Transistor