IRFP250N MOSFET Transistor

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications

Features

•  Advanced Process Technology
•  Dynamic dv/dt Rating
•  175°C Operating Temperature
•  Fast Switching
•  Fully Avalanche Rated
•  Ease of Paralleling
• Simple Drive Requirements

Specifications

• Absolute Maximum Ratings (Ta = 25°C)
•  Drain to source voltage : VDSS = 200 V
•  Gate to source voltage : VGSS = ± 20 V
•  Drain current : ID = 30 A
•  Drain power dissipation : PD = 214 W
•  Channel temperature : Tch = 150 °C
•  Storage temperature : Tstg = -55 to +175 °C

Package Include

• 1x IRFP250N MOSFET Transistor