The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications . It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds .

Quick Overview

• Bi-Polar NPN Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 500mA
• Emitter Base Voltage (VBE) is 5V

The transistor is a semiconductor device that controls the current, which can also be used as an electronic or chiseled element in digital electronics circuits.

Quick Overview

• Type: NPN
• Package: TO-220
• IC= 5A
• VCEO= 100V
• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127

Quick Overview

• Type: N-Channel
• Package: TO-220
• VDSS= 55V
• ID= 49A
• RDS(on)(Typ.)= 17.5mΩ
• Fast Switching

Photo transistors are operated in their active regime, although the base connection is left open circuit or disconnected because it is not required. The base of the photo transistor would only be used to bias the transistor so that additional collector current was flowing and this would mask any current flowing as a result of the photo-action.

Quick Oerview

• Package Type: TO-220
• Transistor Type: N Channel
• Max Voltage Applied From Drain to Source: 100V
• Max Gate to Source Voltage Should Be: ±20V
• Max Continues Drain Current is : 23A (Different manufacturers have slightly different ratings of continuous drain current)

Quick Overview

• Type: PNP
• Package: TO-92
• IC= 200 mAdc
• VCEO= 40 Vdc
• SMALL SIGNAL PNP TRANSISTOR
• SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY
• WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT