Features
-
TYPICAL RDS(on)= 1.35Ω
-
EXTREMELY HIGH dv/dt CAPABILITY
-
100% AVALANCHE TESTED
-
VERY LOW INTRINSIC CAPACITANCES
-
GATE CHARGE MINIMIZED
Specifications
Some Ratings and characteristics(@TC= 25°C):
- Type: N-Channel
- Package: TO-220
- VDSS= 500V
- ID= 4.5A
- RDS(on)(Typ.)= 1.35Ω
- VGSS= ±20V
- Ptot= 100W
- Trr(Typ.)= 435ns
- Tj= -65 to 150°C
- Tstg= -65 to 150°C
Package includes
- 1 x MOSFET IRF830 N-Channel





Reviews
There are no reviews yet