IRFP150 MOSFET Transistor

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. 

FEATURES

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

Specifications

• Channel Type N
• Maximum Continuous Drain Current 41 A
• Maximum Drain Source Voltage 100 V
• Package Type TO-247
• Mounting Type Through Hole
• Pin Count 3
• Maximum Drain Source Resistance 55 mΩ
• Channel Mode Enhancement
• Maximum Power Dissipation 230 W
• Maximum Gate Source Voltage -20 V, +20 V
• Number of Elements per Chip 1
• Length 15.87mm
• Width 5.31mm
• Maximum Operating Temperature +175 °C
• Typical Gate Charge @ Vgs 140 nC @ 10 V
• Height 20.7mm
• Minimum Operating Temperature -55 °C

Package Include

• 1x IRFP150 MOSFET Transistor