Features
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Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
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Fully Characterized Capacitance and Avalanche SOA
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Enhanced body diode dV/dt and dI/dt Capability
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Lead-Free
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Halogen-Free
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Applications: High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits
Specifications
Some Ratings and characteristics(@TC= 25°C):
- Type: N-Channel
- Package: TO-220
- VDSS= 75V
- ID= 80A
- RDS(on)(Typ.)= 7.34mΩ
- VGSS= ±20V
- Ptot= 140W
- TRR(Typ.)= 33ns
- TJ= -55 to 175°C
- Tstg= -55 to 175°C
Package includes
- 1 x IRFB3607 MOSFET N-Channel





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